Name: SIS903DN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS903DN-T1-GE3TR-ND
Price: 65 TWD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIS903DN-T1-GE3
DigiKey Part Number	SIS903DN-T1-GE3TR-ND - Tape & Reel (TR) SIS903DN-T1-GE3CT-ND - Cut Tape (CT) SIS903DN-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIS903DN-T1-GE3
Description	MOSFET 2P-CH 20V 6A PPAK 1212
Manufacturer Standard Lead Time	38 Weeks
Customer Reference
Detailed Description	Mosfet Array 20V 6A (Tc) 2.6W (Ta), 23W (Tc) Surface Mount PowerPAK® 1212-8 Dual
Datasheet	Datasheet
EDA/CAD Models	SIS903DN-T1-GE3 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen III
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 P-Channel (Dual)
FET Feature	-
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Rds On (Max) @ Id, Vgs	20.1mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2565pF @ 10V
Power - Max	2.6W (Ta), 23W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8 Dual
Supplier Device Package	PowerPAK® 1212-8 Dual
Base Product Number	SIS903