Name: SIZ998DT-T1-GE3
Brand: Vishay Siliconix
SKU: SIZ998DT-T1-GE3TR-ND
Price: 91 TWD
Availability: InStock

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SIZ998DT-T1-GE3
DigiKey Part Number	SIZ998DT-T1-GE3TR-ND - Tape & Reel (TR) SIZ998DT-T1-GE3CT-ND - Cut Tape (CT) SIZ998DT-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIZ998DT-T1-GE3
Description	MOSFET 2N-CH 30V 20A 8POWERPAIR
Manufacturer Standard Lead Time	55 Weeks
Customer Reference
Detailed Description	Mosfet Array 30V 20A (Tc), 60A (Tc) 20.2W, 32.9W Surface Mount 8-PowerPair® (6x5)
Datasheet	Datasheet
EDA/CAD Models	SIZ998DT-T1-GE3 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays	Vgs(th) (Max) @ Id 2.2V @ 250µA
Manufacturer Vishay Siliconix	Gate Charge (Qg) (Max) @ Vgs 8.1nC @ 4.5V, 19.8nC @ 4.5V
Series TrenchFET®	Input Capacitance (Ciss) (Max) @ Vds 930pF @ 15V, 2620pF @ 15V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Power - Max 20.2W, 32.9W
Part Status Active	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Configuration 2 N-Channel (Dual), Schottky	Package / Case 8-PowerWDFN
Drain to Source Voltage (Vdss) 30V	Supplier Device Package 8-PowerPair® (6x5)
Current - Continuous Drain (Id) @ 25°C 20A (Tc), 60A (Tc)	Base Product Number SIZ998
Rds On (Max) @ Id, Vgs 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V