Name: SUP60030E-GE3
Brand: Vishay Siliconix
SKU: SUP60030E-GE3-ND
Price: 131 TWD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SUP60030E-GE3
DigiKey Part Number	SUP60030E-GE3-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SUP60030E-GE3
Description	MOSFET N-CH 80V 120A TO220AB
Manufacturer Standard Lead Time	33 Weeks
Customer Reference
Detailed Description	N-Channel 80 V 120A (Tc) 375W (Tc) Through Hole TO-220AB
Datasheet	Datasheet
EDA/CAD Models	SUP60030E-GE3 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET®
Packaging	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	3.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	141 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7910 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	375W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Base Product Number	SUP60030