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- Cree’s power and RF division is now known as Wolfspeed, A Cree Company. Wolfspeed is liberating power and wireless systems from the limitations of silicon by leading the innovation and commercialization of next-generation systems based on silicon carbide and gallium nitride.
C3M™ Planar MOSFET Technology
Wolfspeed’s advanced SiC MOSFET technology is offered in low-inductance discrete packing, allowing engineers to take advantage of C3M™ planar MOSFET chips.
G5 Z-Rec® SiC Schottky Diodes
Cree Wolfspeed's C5D 1700 V Z-Rec® Schottky diode products were designed to help improve system efficiency.
CMPA5585030F 30 W GaN MMIC Power Amplifier
Wolfspeed’s CMPA5585030F 30 W GaN MMIC power amplifier comes in a 10-lead metal/ceramic flanged package for optimal electrical and thermal performance.
C3M0065090J 900 V SiC MOSFET
Wolfspeed’s C3M0065090J 900 V MOSFET enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions.
CGH27015 Gallium-Nitride (GaN) High-Electron-Mobility-Transistor (HEMT)
Wolfspeed's CGH27015 GaN HEMT is designed for high-efficiency, high-gain, and wide bandwidth capabilities in amplifier applications.
CGHV40050F 50 V GaN Transistor
Wolfspeed’s CGHV40050 operates from a 50 V rail and offers a general-purpose, broadband solution to a variety of RF and microwave applications.
Second-Generation C2M1000170D Silicon Carbide MOSFET
Duration: 5 minutes
Wolfspeed's Gen2 1700 V SiC MOSFET can reduce system cost while improving the reliability.
SiC Schottky Diodes in Non-Isolated LED Drivers
C3D1P7060Q diode has zero reverse recovery energy resulting in higher system efficiency, lower system temp, lower EMI emissions, and increased reliability.
SiC Diodes in Inverter Modules
Duration: 15 minutes
Wolfspeed’s Silicon Carbide (SiC) diodes and the benefits they provide when implemented into power inverter applications.
SiC Schottky Diodes
Active Power Factor Correction (PFC) basics, SiC Schottky selection guide, and design considerations.
Think Like Cree, Episode 1: Everett Bradford, R&D Engineer
There are robots, and then there are rope-bots. Watch as Cree’s own engineer, Everett, tests to see if the latter can cut it…out of a tall tree.
Publish Date: 2019-02-18
Assembling a Packaged Wolfspeed GaN MMIC into a Test Fixture
Publish Date: 2018-04-26
See Cree's Gallium Nitride (GaN) transistors and MMICs for X-Band radar power amplifiers
Publish Date: 2016-07-08
Using SiC Devices to Improve an LED Driver
We step into Cree's lab where Adam shows some examples of Cree reference designs demonstrating how SiC can achieve high power density.
Publish Date: 2016-06-22
