Name: IRFB4227PBF
Brand: Infineon Technologies
SKU: 448-IRFB4227PBF-ND
Price: 100 TWD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IRFB4227PBF
DigiKey Part Number	448-IRFB4227PBF-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IRFB4227PBF
Description	MOSFET N-CH 200V 65A TO220AB
Manufacturer Standard Lead Time	27 Weeks
Customer Reference
Detailed Description	N-Channel 200 V 65A (Tc) 330W (Tc) Through Hole TO-220AB
Datasheet	Datasheet
EDA/CAD Models	IRFB4227PBF Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	HEXFET®
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	24mOhm @ 46A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	98 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	4600 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	330W (Tc)
Operating Temperature	-40°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Base Product Number	IRFB4227

Product Questions and Answers

See what engineers are asking, ask your own questions, or help out a member of the DigiKey engineering community

In-Stock: 3,954

Check for Additional Incoming Stock

Quantity

All prices are in TWD

Tube