Learn the history of Silicon Carbide (SiC) including the variety of uses, pros and cons, and products produced using SiC.
GeneSiC is offering and continuously improving innovative Silicon Carbide power rectifiers for high voltage rating applications, with significant advantages.
This article looks at the architectural improvements and newer processing techniques that are pushing silicon device thermal ratings up.
Features superior surge current capability, positive temperature coefficient of Vf, superior figure of merit Qc/If and much more.
Silicon Carbide Power Schottky Diode feature superior surge current capability and positive temperature coefficient of Vf.
Silicon Carbide Transistor advantages include low switching losses, higher efficiency, high temperature operation and high short circuit withstand capability.
1N3214 features high surge capability and types up to 600 V VRRM.
MBR60040CT, 600 A silicon power schottky diode features high surge capability and types up to 100 V VRRM.
MBR40044CT, 400 A Schottky diode features high surge capability and types up to 100 V VRRM.
"Adding suppliers as committed to innovation as GeneSiC Semiconductor affirms our commitment to providing the newest, state-of-the-art products to our customers."
12.9 kV SiC PiN diodes with low on-state drops and high carrier lifetimes from GeneSiC Semiconductor.
Exploiting the high temperature promise of SiC from GeneSiC.
1200 V-class 4H-SiC “Super” junction transistors with current gains of 88 and ultra-fast switching capability from GeneSiC Semiconductor.
SiC “Super” junction transistors offer breakthrough high temp performance from GeneSiC Semiconductor.
1200 V/100 A Si IGBT/SiC diode copack cuts switching losses from GeneSiC Semiconductor.

