Name: BSZ160N10NS3GATMA1
Brand: Infineon Technologies
SKU: BSZ160N10NS3GATMA1TR-ND
Price: 75 TWD
Availability: InStock

BSZ160N10NS3GATMA1
cms-digikey-product-number	BSZ160N10NS3GATMA1TR-ND - Tape & Reel (TR) BSZ160N10NS3GATMA1CT-ND - Cut Tape (CT) BSZ160N10NS3GATMA1DKR-ND - Digi-Reel®
cms-manufacturer	Infineon Technologies
cms-manufacturer-product-number	BSZ160N10NS3GATMA1
cms-description	MOSFET N-CH 100V 8A/40A 8TSDSON
cms-standard-lead-time	61 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 100 V 8A (Ta), 40A (Tc) 2.1W (Ta), 63W (Tc) Surface Mount PG-TSDSON-8
Datasheet	Datasheet
cms-eda-cad-models	BSZ160N10NS3GATMA1 Models

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	8A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	16mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.5V @ 12µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1700 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 63W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-TSDSON-8
Package / Case	8-PowerTDFN
Base Product Number	BSZ160

BSZ160N10NS3GATMA1