Silicon Carbide (SiC): History and Applications 發佈日期：2016-12-14

Learn the history of Silicon Carbide (SiC) including the variety of uses, pros and cons, and products produced using SiC.

Image of GeneSiC's GAP3SLT33-220FP SiC Schottkey Rectifier SiC Schottky Rectifier 發佈日期：2015-08-28

GeneSiC is offering and continuously improving innovative Silicon Carbide power rectifiers for high voltage rating applications, with significant advantages.

MOSFETs that Can Take the Heat 發佈日期：2013-10-15

This article looks at the architectural improvements and newer processing techniques that are pushing silicon device thermal ratings up.

Image of GeneSiC Semiconductor's Silicon Carbide Power Schottky Diodes 碳化矽功率肖特基二極體 發佈日期：2013-02-06

具有優異的突波電流處理能力、Vf 正溫度係數、優異的效能指數 Qc/If 等特點。

Image of Image of GeneSiC's Silicon Carbide Schottky Diode 碳化矽肖特基二極體 更新日期： 2019-02-19

碳化矽功率肖特基二極體具有優異的突波電流處理能力和 Vf 正溫度係數。

Image of GeneSiC Semiconductor's Silicon Carbide Transistor 碳化矽電晶體 發佈日期：2013-02-05

碳化矽電晶體的優勢包括低切換損耗、更高效率、耐高溫操作以及高短路耐受能力。

Image of GeneSiC Semiconductor's 1N3214 Silicon Standard Recovery Diode 1N3214 Silicon Standard Recovery Diode 發佈日期：2013-01-31

1N3214 features high surge capability and types up to 600 V VRRM.

Image of GeneSiC Semiconductor's MBR60040CT Silicon Power Schottky Diode MBR60040CT Silicon Power 600 A Schottky Diode 發佈日期：2013-01-31

MBR60040CT, 600 A silicon power schottky diode features high surge capability and types up to 100 V VRRM.

Image of GeneSiC Semiconductor's MBR40040CT Silicon Power 400 A Schottky Diode MBR40040CT Silicon Power 400 A Schottky Diode 發佈日期：2013-01-31

MBR40044CT, 400 A Schottky diode features high surge capability and types up to 100 V VRRM.

Digi-Key Corporation Signs Global Distribution Agreement with GeneSiC Semiconductor 發佈日期：2013-01-08

"Adding suppliers as committed to innovation as GeneSiC Semiconductor affirms our commitment to providing the newest, state-of-the-art products to our customers."

SiC PiN Diodes

12.9 kV SiC PiN diodes with low on-state drops and high carrier lifetimes from GeneSiC Semiconductor.

High Temperature Promise of SiC

Exploiting the high temperature promise of SiC from GeneSiC.

Super Junction Transistors

1200 V-class 4H-SiC “Super” junction transistors with current gains of 88 and ultra-fast switching capability from GeneSiC Semiconductor.

SiC Super Junction Transistors

SiC “Super” junction transistors offer breakthrough high temp performance from GeneSiC Semiconductor.

Si IGBT/SiC Diode Copack

1200 V/100 A Si IGBT/SiC diode copack cuts switching losses from GeneSiC Semiconductor.